O'uchi, Shin-ichi: search on Z-Library

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1

[IEEE ESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, UK (2008.09.15-2008.09.19)] ESSDERC 2008 - 38th European Solid-State Device Research Conference - Enhancing noise margins of FinFET SRAM by integrating Vth-controllable flexible-pass-gates

Endo, Kazuhiko, O'uchi, Shin-ichi, Ishikawa, Yuki, Liu, Yongxum, Matsukawa, Takashi, Masahara, Meishoku, Sakamoto, Kunihiro, Tsukada, Junichi, Ishii, Kenichi, Yamauchi, Hiromi, Suzuki, Eiichi

Year:

2008

Language:

english

File:

PDF, 903 KB

english, 2008

2

Enhancement of FinFET performance using 25-nm-thin sidewall spacer grown by atomic layer deposition

Kazuhiko Endo, Yuki Ishikawa, Takashi Matsukawa, Yongxum Liu, Shin-ichi O’uchi, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara

Journal:

Solid-State Electronics

Year:

2012

Language:

english

File:

PDF, 1.23 MB

english, 2012

3

Fully Integrated, 100-mV Minimum Input Voltage Converter with Gate-Boosted Charge Pump Kick-Started by LC Oscillator For Energy Harvesting

Fuketa, Hiroshi, O uchi, Shin-ichi, Matsukawa, Takashi

Journal:

IEEE Transactions on Circuits and Systems II: Express Briefs

Year:

2016

Language:

english

File:

PDF, 580 KB

english, 2016

4

Investigation of Thermal Stability of TiN Film Formed by Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium Precursor for Metal-Gate Metal–Oxide–Semiconductor Field-Effect Transistor

Hayashida, Tetsuro, Endo, Kazuhiko, Liu, Yongxun, Kamei, Takahiro, Matsukawa, Takashi, O'uchi, Shin-ichi, Sakamoto, Kunihiro, Tsukada, Junichi, Ishikawa, Yuki, Yamauchi, Hiromi, Ogura, Atsushi, Masaha

Journal:

Japanese Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 383 KB

english, 2010

5

Flex-pass-gate SRAM for static noise margin enhancement using FinFET-based technology

Shin-ichi O’uchi, Kazuhiko Endo, Meishoku Masahara, Kunihiro Sakamoto, Yongxun Liu, Takashi Matsukawa, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 801 KB

english, 2008

6

Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on performance of tunnel field-effect transistors

Morita, Yukinori, Mori, Takahiro, Migita, Shinji, Mizubayashi, Wataru, Fukuda, Koichi, Matsukawa, Takashi, Endo, Kazuhiko, O’uchi, Shin-ichi, Liu, Yongxun, Masahara, Meishoku, Ota, Hiroyuki

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 1.88 MB

english, 2015

7

[IEEE ESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, UK (2008.09.15-2008.09.19)] ESSDERC 2008 - 38th European Solid-State Device Research Conference - Dual metal gate FinFET integration by Ta/Mo diffusion technology for Vt reduction and multi-Vt CMOS application

Matsukawa, Takashi, Endo, Kazuhiko, Liu, Yongxun, O'uchi, Shin-ichi, Masahara, Meishoku, Ishikawa, Yuki, Yamauchi, Hiromi, Tsukada, Junichi, Ishii, Ken-ichi, Sakamoto, Kunihiro, Suzuki, Eiichi

Year:

2008

Language:

english

File:

PDF, 1.73 MB

english, 2008

8

Tunnel Field-Effect Transistors with Extremely Low Off-Current Using Shadowing Effect in Drain Implantation

Mori, Takahiro, Yasuda, Tetsuji, Maeda, Tatsuro, Mizubayashi, Wataru, O'uchi, Shin-ichi, Liu, Yongxun, Sakamoto, Kunihiro, Masahara, Meishoku, Ota, Hiroyuki

Journal:

Japanese Journal of Applied Physics

Year:

2011

Language:

english

File:

PDF, 1.75 MB

english, 2011

9

[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Advanced FinFET CMOS Technology: TiN-Gate, Fin-Height Control and Asymmetric Gate Insulator Thickness 4T-FinFETs

Liu, Yongxun, Matsukawa, Takashi, Endo, Kazuhiko, Masahara, Meishoku, Ishii, Kenichi, O'uchi, Shin-ichi, Yamauchi, Hiromi, Tsukada, Junichi, Ishikawa, Yuki, Suzuki, Eiichi

Year:

2006

Language:

english

File:

PDF, 3.46 MB

english, 2006

10

Analysis of Threshold Voltage Flexibility in Ultrathin-BOX SOI FinFETs

Endo, Kazuhiko, Migita, Shinji, Ishikawa, Yuki, Matsukawa, Takashi, O'uchi, Shin-ichi, Tsukada, Junji, Mizubayashi, Wataru, Morita, Yukinori, Ota, Hiroyuki, Yamauchi, Hitomi, Masahara, Meishoku

Journal:

Journal of Low Power Electronics and Applications

Year:

2014

Language:

english

File:

PDF, 859 KB

english, 2014

11

[IEEE 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - Florence, Italy (2018.5.27-2018.5.30)] 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - Image-Classifier Deep Convolutional Neural Network Training by 9-bit Dedicated Hardware to Realize Validation Accuracy and Energy Efficiency Superior to the Half Precision Floating Point Format

O'uchi, Shin-ichi, Fuketa, Hiroshi, Ikegami, Tsutomu, Nogami, Wakana, Matsukawa, Takashi, Kudoh, Tomohiro, Takano, Ryousei

Year:

2018

Language:

english

File:

PDF, 912 KB

english, 2018

12

Closed-form analytical model of static noise margin for ultra-low voltage eight-transistor tunnel FET static random access memory

Fuketa, Hiroshi, O’uchi, Shin-ichi, Fukuda, Koichi, Mori, Takahiro, Morita, Yukinori, Masahara, Meishoku, Matsukawa, Takashi

Journal:

Japanese Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 3.17 MB

english, 2016

13

[IEEE 2019 International Joint Conference on Neural Networks (IJCNN) - Budapest, Hungary (2019.7.14-2019.7.19)] 2019 International Joint Conference on Neural Networks (IJCNN) - Optimizing Weight Value Quantization for CNN Inference

Nogami, Wakana, Ikegami, Tsutomu, O'uchi, Shin-ichi, Takano, Ryousei, Kudoh, Tomohiro

Year:

2019

Language:

english

File:

PDF, 686 KB

english, 2019

14

[IEEE 2014 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2014.12.15-2014.12.17)] 2014 IEEE International Electron Devices Meeting - Scaling breakthrough for analog/digital circuits by suppressing variability and low-frequency noise for FinFETs by amorphous metal gate technology

Matsukawa, Takashi, Fukuda, Koichi, Yongxun Liu,, Tsukada, Junichi, Yamauchi, Hiromi, Ishikawa, Yuki, Endo, Kazuhiko, O'uchi, Shin-ichi, Migita, Shinji, Mizubayashi, Wataru, Morita, Yukinori, Ota, Hi

Year:

2014

Language:

english

File:

PDF, 850 KB

english, 2014

15

Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model

Morita, Yukinori, Mori, Takahiro, Migita, Shinji, Mizubayashi, Wataru, Tanabe, Akihito, Fukuda, Koichi, Matsukawa, Takashi, Endo, Kazuhiko, O’uchi, Shin-ichi, Liu, Yongxun, Masahara, Meishoku, Ota, Hi

Journal:

Solid-State Electronics

Year:

2014

Language:

english

File:

PDF, 886 KB

english, 2014

16

[IEEE 2007 International Semiconductor Device Research Symposium - College Park, MD, USA (2007.12.12-2007.12.14)] 2007 International Semiconductor Device Research Symposium - Nitrogen gas flow ratio controlled PVD TiN metal gate technology for FinFET CMOS

Yongxun Liu,, Tetsuro Hayashida,, Takashi Matsukawa,, Kazuhiko Endo,, Meishoku Masahara,, Shin-ichi O'uchi,, Kunihoro Sakamoto,, Kenichi Ishii,, Junichi Tsukada,, Yuki Ishikawa,, Hiromi Yama

Year:

2007

Language:

english

File:

PDF, 1012 KB

english, 2007

17

Static noise margin enhancement by flex-pass-gate SRAM

Shin-Ichi O'uchi, Meishoku Masahara, Kunihiro Sakamoto, Kazuhiko Endo, Yungxun Liu, Takashi Matsukawa, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki

Journal:

Electronics and Communications in Japan

Year:

2011

Language:

english

File:

PDF, 1.15 MB

english, 2011

18

[IEEE 2015 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2015.12.7-2015.12.9)] 2015 IEEE International Electron Devices Meeting (IEDM) - Robust and compact key generator using physically unclonable function based on logic-transistor-compatible poly-crystalline-Si channel FinFET technology

O'uchi, Shin-ichi, Liu, Yongxun, Hori, Yohei, Irisawa, Toshifumi, Fuketa, Hiroshi, Morita, Yukinori, Migita, Shinji, Mori, Takahiro, Nakagawa, Tadashi, Tsukada, Junichi, Koike, Hanpei, Masahara, Meish

Year:

2015

Language:

english

File:

PDF, 976 KB

english, 2015

19

[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - May the fourth (terminal) be with you - circuit design beyond FinFET

Koike, Hanpei, O'uchi, Shin-ichi, Hioki, Masakazu, Endo, Kazuhiko, Matsukawa, Takashi, Yongxun Liu,, Masahara, Meishoku, Tsutsumi, Toshiyuki, Sakamoto, Kunihiro, Nakagawa, Tadashi, Sekigawa, Toshihir

Year:

2010

Language:

english

File:

PDF, 73 KB

english, 2010

20

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Correlative analysis between characteristics of 30-nm LG FinFETs and SRAM performance

Endo, Kazuhiko, O'uchi, Shin-ichi, Ishikawa, Yuki, Liu, Yongxun, Matsukawa, Takashi, Sakamoto, Kunihiro, Tsukada, Junichi, Yamauchi, Hiromi, Masahara, Meishoku

Year:

2011

Language:

english

File:

PDF, 536 KB

english, 2011

21

Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium–Nitride Gate for High-Performance Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors

Hayashida, Tetsuro, Endo, Kazuhiko, Liu, Yongxun, O'uchi, Shin-ichi, Matsukawa, Takashi, Mizubayashi, Wataru, Migita, Shinji, Morita, Yukinori, Ota, Hiroyuki, Hashiguchi, Hiroki, Kosemura, Daisuke, Ka

Journal:

Japanese Journal of Applied Physics

Year:

2012

Language:

english

File:

PDF, 1.23 MB

english, 2012

22

Atomic Layer Deposition of SiO 2 for the Performance Enhancement of Fin Field Effect Transistors

Endo, Kazuhiko, Ishikawa, Yuki, Matsukawa, Takashi, Liu, Yongxun, O'uchi, Shin-ichi, Sakamoto, Kunihiro, Tsukada, Junichi, Yamauchi, Hiromi, Masahara, Meishoku

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 4.00 MB

english, 2013

23

[IEEE Proceedings of 2010 International Symposium on VLSI Technology, System and Application - Hsin Chu, Taiwan (2010.04.26-2010.04.28)] Proceedings of 2010 International Symposium on VLSI Technology, System and Application - Variability analysis of TiN FinFET SRAM cell performance and its compensation using Vth-controllable independent double-gate FinFET

Endo, Kazuhiko, O'uchi, Shin-ichi, Ishikawa, Yuki, Liu, Yongxun, Matsukawa, Takashi, Sakamoto, Kunihiro, Tsukada, Junichi, Yamauchi, Hiromi, Masahara, Meishoku

Year:

2010

Language:

english

File:

PDF, 990 KB

english, 2010

24

Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET

Morita, Yukinori, Fukuda, Koichi, Mori, Takahiro, Mizubayashi, Wataru, Migita, Shinji, Endo, Kazuhiko, O’uchi, Shin-ichi, Liu, Yongxun, Masahara, Meishoku, Matsukawa, Takashi, Ota, Hiroyuki

Journal:

Japanese Journal of Applied Physics

Year:

2016

File:

PDF, 1.85 MB

2016

25

Variability Analysis of TiN Metal-Gate FinFETs

Endo, Kazuhiko, O'uchi, Shin-ichi, Ishikawa, Yuki, Yongxun Liu,, Matsukawa, Takashi, Sakamoto, Kunihiro, Tsukada, Junichi, Yamauchi, Hiromi, Masahara, Meishoku

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 117 KB

english, 2010

26

Fractally-Structured CMOS Processor for Quantum-Circuit Emulation

O'uchi, Shin-ichi, Fujishima, Minoru, Hoh, Koichiro

Journal:

Japanese Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 316 KB

english, 2002

27

Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates

Endo, Kazuhiko, O'uchi, Shin-ichi, Ishikawa, Yuki, Liu, Yongxum, Matsukawa, Takashi, Masahara, Meishoku, Sakamoto, Kunihiro, Tsukada, Junichi, Ishii, Kenichi, Yamauchi, Hiromi, Suzuki, Eiichi

Journal:

Applied Physics Express

Year:

2009

Language:

english

File:

PDF, 381 KB

english, 2009

28

Suppression of tunneling rate fluctuations in tunnel field-effect transistors by enhancing tunneling probability

Mori, Takahiro, Migita, Shinji, Fukuda, Koichi, Asai, Hidehiro, Morita, Yukinori, Mizubayashi, Wataru, Liu, Yongxun, O’uchi, Shin-ichi, Fuketa, Hiroshi, Otsuka, Shintaro, Yasuda, Tetsuji, Masahara, Me

Journal:

Japanese Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 1.15 MB

english, 2017

29

An 8-qubit quantum-circuit processor

Shin-ichi O'uchi, M. Fujishima, K. Hoh

Year:

2002

Language:

english

File:

PDF, 405 KB

english, 2002

30

Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation

Matsukawa, Takashi, Liu, Yongxun, Mori, Takahiro, Morita, Yukinori, Otsuka, Shintaro, O'uchi, Shin-ichi, Fuketa, Hiroshi, Migita, Shinji, Masahara, Meishoku

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.47 MB

english, 2017

31

1/ f Noise Characteristics of Fin-Type Field-Effect Transistors in Saturation Region

Sakai, Hideo, O'uchi, Shin-ichi, Endo, Kazuhiko, Matsukawa, Takashi, Liu, Yongxun, Ishikawa, Yuki, Tsukada, Junichi, Nakagawa, Tadashi, Sekigawa, Toshihiro, Koike, Hanpei, Masahara, Meishoku, Ishikuro

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.63 MB

english, 2013

32

Structural and electrical characterization of epitaxial Ge thin films on Si(001) formed by sputtering

Otsuka, Shintaro, Mori, Takahiro, Morita, Yukinori, Uchida, Noriyuki, Liu, Yongxun, O’uchi, Shin-ichi, Fuketa, Hiroshi, Migita, Shinji, Masahara, Meishoku, Matsukawa, Takashi

Journal:

Japanese Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 1.58 MB

english, 2017

33

[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Suppressing Vt and Gm variability of FinFETs using amorphous metal gates for 14 nm and beyond

Matsukawa, Takashi, Liu, Yongxun, Mizubayashi, Wataru, Tsukada, Junichi, Yamauchi, Hiromi, Endo, Kazuhiko, Ishikawa, Yuki, O'uchi, Shin-ichi, Ota, Hiroyuki, Migita, Shinji, Morita, Yukinori, Masahara,

Year:

2012

Language:

english

File:

PDF, 3.19 MB

english, 2012

34

Cointegration of High-Performance Tied-Gate Three-Terminal FinFETs and Variable Threshold-Voltage Independent-Gate Four-Terminal FinFETs With Asymmetric Gate-Oxide Thicknesses

Liu, Yongxun, Matsukawa, Takashi, Endo, Kazuhiko, Masahara, Meishoku, O'uchi, Shin-ichi, Ishii, Kenichi, Yamauchi, Hiromi, Tsukada, Junichi, Ishikawa, Yuki, Suzuki, Eiichi

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 405 KB

english, 2007

35

Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET

Morita, Yukinori, Fukuda, Koichi, Mori, Takahiro, Mizubayashi, Wataru, Migita, Shinji, Endo, Kazuhiko, O’uchi, Shin-ichi, Liu, Yongxun, Masahara, Meishoku, Matsukawa, Takashi, Ota, Hiroyuki

Journal:

Japanese Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 1.85 MB

english, 2016

36

Charging and Retention Times in Silicon-Floating-Dot-Single-Electron Memory

O'uchi, Shin-ichi, Tsubokura, Takeshi, Tajima, Takuro, Amakawa, Shuhei, Fujishima, Minoru, Hoh, Koichiro

Journal:

Japanese Journal of Applied Physics

Year:

2001

Language:

english

File:

PDF, 112 KB

english, 2001

37

Impact of granular work function variation in a gate electrode on low-frequency noise for fin field-effect transistors

Matsukawa, Takashi, Fukuda, Koichi, Liu, Yongxun, Tsukada, Junichi, Yamauchi, Hiromi, Endo, Kazuhiko, Ishikawa, Yuki, O’uchi, Shin-ichi, Migita, Shinji, Morita, Yukinori, Mizubayashi, Wataru, Ota, Hir

Journal:

Applied Physics Express

Year:

2015

Language:

english

File:

PDF, 868 KB

english, 2015

38

[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Enhancing SRAM cell performance by using independent double-gate FinFET

Endo, Kazuhiko, O'uchi, Shin-ichi, Yuki Ishikawa,, Liu, Yongxun, Takashi Matsukawa,, Kunihiro Sakamoto,, Junichi Tsukada,, Kenichi Ishii,, Hiromi Yamauchi,, Eiichi Suzuki,, Meishoku Masahara,

Year:

2008

Language:

english

File:

PDF, 594 KB

english, 2008

39

Unexpected equivalent-oxide-thickness dependence of the subthreshold swing in tunnel field-effect transistors

Mori, Takahiro, Yasuda, Tetsuji, Fukuda, Koichi, Morita, Yukinori, Migita, Shinji, Tanabe, Akihito, Maeda, Tatsuro, Mizubayashi, Wataru, O’uchi, Shin-ichi, Liu, Yongxun, Masahara, Meishoku, Miyata, No

Journal:

Applied Physics Express

Year:

2014

Language:

english

File:

PDF, 823 KB

english, 2014

40

A Closed-Form Expression for Minimum Operating Voltage of CMOS D Flip-Flop

Fuketa, Hiroshi, O'uchi, Shin-ichi, Matsukawa, Takashi

Journal:

IEEE Transactions on Very Large Scale Integration (VLSI) Systems

Year:

2017

Language:

english

File:

PDF, 2.08 MB

english, 2017

41

[IEEE Tutorial (ICICDT) - Grenoble, France (2008.06.2-2008.06.4)] 2008 IEEE International Conference on Integrated Circuit Design and Technology and Tutorial - Independent-gate four-terminal FinFET SRAM for drastic leakage current reduction

Kazuhiko Endo,, Shin-ichi O'uchi,, Yuki Ishikawa,, Yongxun Liu,, Takashi Matsukawa,, Kunihiro Sakamoto,, Meishoku Masahara,, Junichi Tsukada,, Kenichi Ishii,, Hiromi Yamauchi,, Eiichi Suzuki

Year:

2008

Language:

english

File:

PDF, 1007 KB

english, 2008

42

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Comprehensive analysis of Ion variation in metal gate FinFETs for 20nm and beyond

Matsukawa, Takashi, Liu, Yongxun, O'uchi, Shin-ichi, Endo, Kazuhiko, Tsukada, Junichi, Yamauchi, Hiromi, Ishikawa, Yuki, Ota, Hiroyuki, Migita, Shinji, Morita, Yukinori, Mizubayashi, Wataru, Sakamoto,

Year:

2011

Language:

english

File:

PDF, 1.67 MB

english, 2011

43

Four-Terminal FinFETs Fabricated Using an Etch-Back Gate Separation

Endo, Kazuhiko, Ishikawa, Yuki, Liu, Yongxun, Ishii, Kenichi, Matsukawa, Takashi, O'uchi, Shin-ichi, Masahara, Meishoku, Sugimata, Etsuro, Tsukada, Jyunichi, Yamauchi, Hiromi, Suzuki, Eiichi

Journal:

IEEE Transactions on Nanotechnology

Year:

2007

Language:

english

File:

PDF, 1.72 MB

english, 2007

44

Tunnel FinFET CMOS inverter with very low short-circuit current for ultralow-power Internet of Things application

Morita, Yukinori, Fukuda, Koichi, Liu, Yongxun, Mori, Takahiro, Mizubayashi, Wataru, O’uchi, Shin-ichi, Fuketa, Hiroshi, Otsuka, Shintaro, Migita, Shinji, Masahara, Meishoku, Endo, Kazuhiko, Ota, Hiro

Journal:

Japanese Journal of Applied Physics

Year:

2017

Language:

english

File:

PDF, 1.27 MB

english, 2017

45

[IEEE 2011 IEEE International SOI Conference - Tempe, AZ, USA (2011.10.3-2011.10.6)] IEEE 2011 International SOI Conference - Variability origins of FinFETs and perspective beyond 20nm node

Matsukawa, Takashi, Liu, Yongxun, Endo, Kazuhiko, O'uchi, Shin-ichi, Masahara, Meishoku

Year:

2011

Language:

english

File:

PDF, 1.06 MB

english, 2011

46

Variability Analysis of TiN FinFET SRAM Cells and Its Compensation by Independent-DG FinFETs

Endo, Kazuhiko, O'uchi, Shin-ichi, Ishikawa, Yuki, Liu, Yongxun, Matsukawa, Takashi, Sakamoto, Kunihiro, Tsukada, Junichi, Yamauchi, Hiromi, Masahara, Meishoku

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 271 KB

english, 2010

47

[IEEE 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Rohnert Park, CA, USA (2015.10.5-2015.10.8)] 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - 0.8-V rail-to-rail operational amplifier with near-Vt gain-boosting stage fabricated in FinFET technology for IoT sensor nodes

O'uchi, Shin-ichi, Liu, Yongxun, Nakagawa, Tadashi, Mizubayashi, Wataru, Migita, Shinji, Morita, Noriyuki, Ota, Hiroyuki, Ishikawa, Yuki, Tsukada, Junichi, Koike, Hanpei, Masahara, Meishoku, Endo, Kaz

Year:

2015

Language:

english

File:

PDF, 714 KB

english, 2015

48

Optimum Gate Workfunction for $V_{\rm th}$-Controllable Four-Terminal-Driven Double-Gate MOSFETs (4T-XMOSFETs)—Band-Edge Workfunction Versus Midgap Workfunction

Masahara, Meishoku, O'uchi, Shin-ichi, Liu, Yongxun, Sakamoto, Kunihiro, Endo, Kazuhiko, Matsukawa, Takashi, Sekigawa, Toshihiro, Koike, Hanpei, Suzuki, Eiichi

Journal:

IEEE Transactions on Nanotechnology

Year:

2006

Language:

english

File:

PDF, 1.11 MB

english, 2006

49

Experimental Evaluation of Effects of Channel Doping on Characteristics of FinFETs

Endo, Kazuhiko, Ishikawa, Yuki, Liu, Yongxum, Masahara, Meishoku, Matsukawa, Takashi, O'uchi, Shin-Ichi, Ishii, Kenichi, Yamauchi, Hiromi, Tsukada, Junichi, Suzuki, Eiichi

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 122 KB

english, 2007

50

Epitaxial growth of Ge thin film on Si (001) by DC magnetron sputtering

Otsuka, Shintaro, Mori, Takahiro, Morita, Yukinori, Uchida, Noriyuki, Liu, Yongxun, O'uchi, Shin-ichi, Fuketa, Hiroshi, Migita, Shinji, Masahara, Meishoku, Matsukawa, Takashi

Journal:

Materials Science in Semiconductor Processing

Year:

2016

Language:

english

File:

PDF, 937 KB

english, 2016

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